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Datasheet File OCR Text: |
BCR400W Active Bias Controller Characteristics Supplies stable bias current even at low battery voltage and extreme ambient temperature variation Low voltage drop of 0.7V 3 4 Maximum Ratings Parameter Source voltage Control current Control voltage Reverse voltage between all terminals Total power dissipation, TS = 117 C Junction temperature Storage temperature Symbol VS IContr. VContr. VR Ptot Tj Tstg Value 18 10 16 0.5 330 150 -65 ... 150 mW C Unit V mA V 2 Application notes Stabilizing bias current of NPN transistors and FET's from less than 0.2mA up to more than 200mA Ideal supplement for Sieget and other transistors also usable as current source up to 5mA 1 2 EHA07188 1 4 3 VPS05605 Type BCR400W Marking Pin Configuration W4s 1=GND/ENPN 2=Contr/BNPN 3VS Package 4=Rext/CNPN SOT343 (ENPN, BNPN, CNPN are electrodes of a stabilized NPN transistor) Thermal Resistance Junction - soldering point 1) RthJS 100 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-07-2001 BCR400W Electrical Characteristics at TA=25C, unless otherwise specified Parameter DC Characteristics Additional current consumption VS = 3 V Lowest stabilizing current VS = 3 V Imin 0.1 mA I0 20 40 A Symbol min. Values typ. max. Unit DC Characteristics with stabilized NPN-Transistors Lowest sufficient battery voltage IB (NPN) < 0.5mA Voltage drop (VS - VCE) IC = 25 mA Change of IC versus hFE hFE = 50 Change of IC versus VS VS = 3 V Change of IC versus TA Vdrop IC /IC IC /IC IC /IC 0.65 0.08 0.15 0.2 hFE / VSmin - 1.6 - V hFE VS /VS 2 Aug-07-2001 %/K BCR400W Collector current IC = f (hFE ) IC and hFE refer to stabilized NPN Transistor Parameter Rext. () 10 3 mA Collector Current IC = f (VS) of stabilized NPN Transistor Parameter Rext. () 10 3 mA 2.1 5.9 10 2 5.9 10 2 12.4 IC IC 67 10 1 10 67 1 760 10 0 760 10 0 4.3k 10 -1 0 50 100 150 200 250 - 350 10 -1 0 2 4 6 8 V 11 h FE VS Voltage drop Vdrop = f (IC ) Collector current I C = f (Rext.) of stabilized NPN Transistor 10 3 mA V 2 1.7 1.6 10 2 V drop 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 -2 10 10 -1 IC 10 1 10 0 0 1 2 10 10 10 mA10 3 10 -1 0 10 10 1 10 2 10 3 Ohm10 4 IC Rext. 3 Aug-07-2001 BCR400W Collector current T A = f (IC) of stabilized NPN Transistor Parameter: R ext.() 10 mA 2.2 3 Control current I = f (Rext.) in current source application 10 1 10 2 6 mA IC 26 10 1 65 IContr. 10 0 10 -1 -1 10 290 0 10 760 4.3k 10 -1 -40 -20 0 20 40 60 80 100 120 C 160 10 0 10 1 10 2 KOhm 3 10 TA Rext. Control current I = f (TA ) in current source application Control current I = f (VS ) in current source application 1.5 mA 2.2 mA 1.2 1.8 IContr. 1 0.9 0.8 0.7 0.6 IContr. C 1.1 1.6 1.4 1.2 1 0.8 0.5 0.4 0.3 0.2 0.1 0 -20 0 20 40 60 80 110 0.2 0 0 2 4 6 8 V 0.6 0.4 11 TA VS 4 Aug-07-2001 BCR400W Total power dissipation P tot = f (T S) 400 mW 300 Note that up to TS=115C it is not possible to exceed P tot respecting the maximum ratings of VS and IContr. The collector or drain current (respectively) of the stabilized RF transistor does not affect BCR 400 directly, as it provides just the base current. Ptot 250 200 150 100 50 0 0 20 40 60 80 100 120 C 150 TS Typical application for GaAs FET with active bias controller RF IN RF OUT 100 pF 100 k BCR 400 1 4 R ext 3 2 100 k - VG 1 nF +VS 5 EHA07190 Aug-07-2001 BCR400W RF transistor controlled by BCR400 BCR 400 +V S 3 R ext. 4 Vdrop C 1 2 C1 C2 Be aware that BCR400 stabilized bias current of transistors in an active control loop In order to avoid loop ascillation (hunting), time constants must be chosen adequately, i.e. C1 >= 10 x C2 RF OUT contr. RF IN RF-Transistor EHA07217 RX/TX antenna switch, compatible to control logic and working at wide battery voltage range Antenna TX / 4 RX BCR 400 RX TX 1 4 R ext = 100 - 220 2 3 + VS > 2.7 V EHA07218 6 Aug-07-2001 BCR400W Low voltage reference BCR 400 1 4 2 Red LED V REF 3 +VS EHA07219 Precision timer with BCR400 providing constant charge current +VS BCR 400 3 R ext 4 1 6 2 2 78 4 3 15 EHA07191 Timer IC (555) 7 Aug-07-2001 |
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